スポンサーリンク

Somsung Electronics Co. Ltd. Kyunggi‐do Kor | 論文

• Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
• Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
• Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations
• Ge_2Sb_2Te_5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory

スポンサーリンク