スポンサーリンク
Shonan Institute of Technology | 論文
- L-Band SiGe HBT Frequency-Tunable Dual-Bandpass or Dual-Bandstop Differential Amplifiers Using Varactor-Loaded Series and Parallel LC Resonators
- Electromechanical Properties of BaTiO3 Ceramics Prepared by Spark Plasma Sintering and Other Methods
- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth: Effect of Ar Pressure
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Characteristics of Ohmic Contacts to n-Type Boron Phosphide
- Terahertz Wave Generation Device using Multi-Quantum Well with Transverse Electric Field
- Measurement of Constant and Time-Dependent Polarizations Using Two-Photon Absorption of Si Avalanche Photodiode
- Surface Tension Variation of Molten Silicon Measured by Ring Tensiometry Technique and Related Temperature and Impurity Dependence
- Preparation and Properties of BaTiO3 Ceramics by Spark Plasma Sintering