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Sharp Corp. Nara Jpn | 論文
- Characterization of Direct-Contact Via Plug Formed by Using Selective Aluminum Chemical Vapor Deposition
- Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films
- Improvement of Gap-Filling Property of O_3-tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
- Nd-Fe-B Permanent Magnet Materials
- Single Crystal Measurements of Anisotropy Constants of R_2Fe_B (R=Y, Ce, Pr, Nd, Gd, Tb, Dy and Ho)
- Phase Diagram of the Nd-Fe-B Ternary System
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
- Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Selective Annealing Utilizing Single Pulse Excimer Laser Irradiation for Short Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Ultrashallow Junctions Formed by Excimer Laser Annealing
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Thermoelectric Properties of NaCo_Cu_xO_4 Improved by the Substitution of Cu for Co : Structure and Mechanical and Thermal Properties of Condensed Matter
- Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation