スポンサーリンク
Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan | 論文
- Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
- A 26 GHz Transceiver Chipset for Short Range Radar Using Post-Passivation Interconnection
- Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3