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Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt | 論文
- 904 レーザーアブレーションを利用したクラスター生成装置におけるレーザー誘起衝撃波の解析
- 18pTD-9 時空間局在型クラスター源SCCSによるサイズ制御シリコンクラスター生成
- 時空間局所閉じ込め型クラスタービーム源の開発
- 24pA-4 内部状態の揃ったクラスター生成源の開発(II)
- 26pB-4 内部状態を規定したクラスター生成源の開発
- 28a-S-8 ショック波を利用したレーザー蒸発型クラスター生成の原理
- Effect of Organic Phase on Dynamic and Collective Behavior of Surfactants at Liquid/Liquid Interfaces by a Time-Resolved Quasi-Elastic Laser-Scattering Method
- Thermal Lens Microscope
- Picosecond Energy Transfer at Gold/Electrolyte Interfaces Using Transient Reflecting Grating Method under Surface Plasmon Resonance Condition
- Analysis of Serum Proteins Adsorbed to a Hemodialysis Membrane of Hollowfiber Type by Thermal Lens Microscopy
- Direct Measurements of Femtosecond Energy Dissipation Processes of Hot Electrons in a Gold Film
- Photoemission and X-Ray Absorption Study of La_Sr_xMnO_3
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- Highly Sensitive and Direct Detection of DNA Fragments Using a Laser-Induced Capillary Vibration Effect
- Molecular Transport between Two Phases in a Microchannel
- Integration of Flow Injection Analysis and Zeptomole-Level Detection of the Fe(II)-ο-Phenanthroline Complex
- Sub-Zeptomole Detection in a Microfabricated Glass Channel by Thermal-Lens Microscopy
- Preparation of Ge_Cy Alloys by C Implantation into Ge Crystal and Their Raman Spectra : Semiconductors
- Infrared Absorption Spectra of C Local Mode in Si_Ge_xC_y Crystals : Semiconductors
- Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors