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Semiconductor Company | 論文
- Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation (Special Issue on Heterostructure Electron Devices)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections
- A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)