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School of Electrical Engineering and Computer Science Kyungpook National University | 論文
- Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization
- Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
- Amortized Linux Ext3 File System with Fast Writing after Editing for WinXP-Based Multimedia Application
- Decoupled Location Parameter Estimation of Near-Field Sources with Symmetric ULA
- CT1-2: Autoignition Characteristics of Laminar Lifted Flames in Coflow Jets(CT: Combustion, Thermal and Fluid Science,General Session Papers)
- Color Saturation Compensation in iCAM06 for High-Chroma HDR Imaging
- HMM-Based Underwater Target Classification with Synthesized Active Sonar Signals
- Cryptanalysis of Group Key Agreement Protocol Based on Chaotic Hash Function
- A Cost-Effective Energy-Recovering Sustain Driving Circuit for ac Plasma Display Panels
- A Piezoresistive Silicon Accelerometer Using Porous Silicon Micromachining and Flip-Chip Bonding
- Contrast Enhancement for the Captured Image By Estimating Local Illumination
- Substrate Heated Spray-Deposition Method for High Efficient Organic Solar Cell: Morphology Inspection
- A Model of Luminance-Adaptation for Quantifying Brightness in Mixed Visual Adapting Conditions
- Generalized Symmetry Transformation with Gaussian Phase Weight Function
- Enhancement of Active Layer Characteristics with Solvent Spray Annealing Treatment for Organic Solar Cell
- Dual Surface Discharge Mode for Improving Luminous Efficacy in AC Plasma Display Panel
- Effects of Surface and Plate-Gap Discharges on Panel-Aging Characteristics in Alternating-Current Plasma Display Panel
- Extended-Gate Metal Oxide Semiconductor Field Effect Transistor-Based Biosensor for Detection of Deoxynivalenol
- A Contrast Enhancement Method for HDR Image Using a Modified Image Formation Model
- Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si_Ge_x Layer