スポンサーリンク
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan | 論文
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
- First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy