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Rcamd Research Center Of Advanced Materials Department School Of Advanced Materials Engineering Engi | 論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal buffer
- Characteristic comparison of GaN grown on patterned sapphire substrates following growth time
- Fabrication and Characterization of In_xGa_N Quantum Dots using NNAD Growth Technique
- Growth and Characterization of GaN Nano-column Grown on Gallium Coated Si by Molecular Beam Epitaxy
- Growth of InN on patterned sapphire substrates and its characterization
- Growth of Perfect Crack-Free GaN/Si(111) Epitaxy Using CBL and Superlattice
- Characteristics of back illumination type UV photodetector fabricated by Al_xGa_N heterostructure
- Growth of vertical GaN Nano-Column on Au Droplet/Si(111) Substrate using Pulsed Flow MOCVD Method
- Characteristic comparision of GaN epitaxy grown on patterned and unpatterned Si(111)
- Characteristics of Back-illumination UV Photodetector Fabricated with AlxGa1-xN Heterostructure