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Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD. | 論文
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film