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Process Technology Development Division, Renesas Technology Corporation, Itami, Hyogo 664-0005, Japan | 論文
- Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier
- Effect of NH3-Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory
- Effects of Pore Sealing on Self-Formation of Ti-Rich Barrier Layers in Cu(Ti)/Porous-Low-$k$ Samples
- Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond