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Process Engineering Development Dept., Hitachi ULSI Systems Co., Ltd. | 論文
- Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
- Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment