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Photonics Research Laboratory, Mitsubishi Cable Industries, Ltd. | 論文
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Quasi-Phase-Matched Optical Parametric Oscillator Using Periodically Poled MgO-Doped LiNbO_3 Crystal
- Bulk Periodically Poled MgO-doped LiNbO_3 by External Electric Field Application
- High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy(LED Lighting Technologies)
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy