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Photonic Research Center, Korea Institute of Science and Technology | 論文
- Semiconductor MMI Optical Isolator with Cladding of Ce:YIG
- All-Optical AND Gate Using Cross-Gain Modulation in Semiconductor Optical Amplifiers
- Broadbnd All-Optical Wavelength Conversion Using a Gain Peak Wavelength-Shifted Semiconductor Optical Amplifier Jutegrated Distributed Feedback Laser Diode Structure
- Design and Measurement of Waveguide-Type PnpN Optical Thyristors for Optical Communications : Optics and Quantum Electronics
- Wavelength Tunability of Laterally Coupled Semiconductor Optical Amplifier and Semiconductor Laser Diode : Optics and Quantum Electronics
- All-Optical AND Gate Using Probe and Pump Signals as the Multiple Binary Points in Cross Phase Modulation : Optics and Quantum Electronics
- Negative Pattern Generation Technique by Laser Beam Writing for Integrated Optics
- Realization of All-Optical XOR, NOR, and NAND Gates in Single Format by Using Semiconductor Optical Amplifiers
- AlGaAs/GaAs NpnP Depleted Optical Thyristor Using Bottom Mirror Layers
- Depleted optical thyristor using vertical injection method for good isolation between input and output
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- Dynamic Analysis of Optical Bistability in a Multisection Distributed-Feedback Laxer Diode
- Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process
- A Single to Multi-Wavelength Converter Using Fabry-Perot Laser Diode with Linear Optical Amplifier
- All-Optical Exclusive NOR Logic Gate Using Mach-Zehnder Interferometer : Optics and Quantum Electronics
- Realization of All-Optical Circular Shift Register Using Semiconductor Optical Amplifiers
- Enhanced Light Extraction from Nanoporous Surfaces of InGaN/GaN-Based Light Emitting Diodes
- Enhanced Fabry–Perot Interferences from Nanoporous Surfaces of GaN Thin Films Patterned by Anodic Alumina Templates
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- Broadband All-Optical Wavelength Conversion Using a Gain Peak Wavelength-Shifted Semiconductor Optical Amplifier Integrated Distributed Feedback Laser Diode Structure