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Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan | 論文
- n-Type Doping for Single-Walled Carbon Nanotubes by Oxygen Ion Implantation with 25 eV Ultralow-Energy Ion Beam
- Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3 Process