スポンサーリンク
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan | 論文
- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p--n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy
- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p-n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy (Special Issue : Solid State Devices and Materials)