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National Inst. Res. In Inorganic Materials Ibaraki Jpn | 論文
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Single Crystal X-Ray Structure Analysis of Bi_2(Sr, Ca)_2CuO_x and Bi_2(Sr, Ca)_3Cu_2O_x Superconductors : Electrical Properties of Condensed Matter
- Single-Crystal X-Ray and Magnetization Study of the 106 K Bi-Sr-Ca-Cu-O Superconductor : Electrical Properties Condensed Matter
- A Single Crystal High Temperature X-Ray Study of Orthorhombic Ba_2YCu_O_ Superconductor
- X-Ray Single Crystal Structure Analysis of Tetragonal Ba_2YCu_O_, a High Temperature Form of the Superconductor
- Surface Phonon of MgO Layer on TiC(100) Surface
- DV-Xα Calculations of Charge Exchange between D^+ and TiC, TiC_xO_, and SrO Surfaces during Low Energy D^+ Scattering
- Interaction Potential between He^+ and Ti in a keV Range as Revealed by a Specialized Technique in Ion Scattering Spectroscopy
- Quantitative Surface Atomic Geometry and Two-Dimensional Surface Electron Distribution Analysis by a New Technique in Low-Energy Ion Scattering
- The First Atomic-scale Observation of a Ni_2P(0001) Single Crystal Surface
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
- Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
- Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
- CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy