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Nanoelectronics Research Centre Department Of Electrical And Electronics Engineering Glasgow Univers | 論文
- Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors
- Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition
- A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III--V Metal--Oxide--Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8