Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors
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概要
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In this study, we investigate in situ optical emission spectra from plasma in the reactive ion etching (RIE) of tungsten, a suitable candidate for gate metallization in compound-semiconductor-based high-mobility channel devices. This results in a detailed understanding of the effects of etching parameters vital to reducing etch induced damage and improving etching performance. A SF6 based chemistry was used with other functional gases, such as N2, O2, and CHF3. Van de Pauw (VdP) structures on GaAs based high electron mobility transistor (HEMT) layer structures were used for evaluating plasma-induced damage in the RIE process. The optimised process results in a maximum increase of 15% in the sheet resistance of the semiconductor material. Etched tungsten line widths down to 25 nm with well controlled profile were obtained by adjusting the etching conditions based on the understanding of the etching mechanism.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-30
著者
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Wilkinson Chris
Nanoelectronics Research Centre Department Of Electrical And Electronics Engineering Glasgow Univers
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Li Xu
Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow Unive
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Zhou Haiping
Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow Unive
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Thayne Iain
Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow Unive
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Li Xu
Nanoelectronics Research Centre Department Of Electrical And Electronics Engineering Glasgow Univers
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Zhou Haiping
Nanoelectronics Research Centre Department Of Electrical And Electronics Engineering Glasgow Univers
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Thayne Iain
Nanoelectronics Research Centre Department Of Electrical And Electronics Engineering Glasgow University
関連論文
- Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors
- Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition
- A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III--V Metal--Oxide--Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8