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Nanoelectronics Collaborative Research Center The University Of Tokyo | 論文
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Enhanced Optical Properties of High-Density (>10^/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation
- Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-(2 × 6) Surface
- Novel Palladium Catalyst Supported on GaAs(001) Passivated by Ammonium Sulfide
- InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
- Group Delay of a Coupled-Defect Waveguide in a Photonic Crystal
- Reflection Characteristics of Coupled-Defect-Type Photonic Crystals
- Group-Delay Properties of Coupled-Defect Structures in Photonic Crystals