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NTT Electrical Communications Laboratories | 論文
- Preparation and Physical Properties of Sodium Lignosulfonate-and Saccharide-based Rigid Polyurethane Foams
- Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
- Largely Anisotropic Superconducting Critical Current in Epitaxially Grown Ba_2YCu_3O_ Thin Film
- Highly Sensitive Optical Detector Using Superconducting Oxide BaPb_Bi_O_3 (BPB)
- Electromagnetic Coupling Effects in BaPb_Bi_O_3 Two-Dimensional Josephson Tunnel Junction Arrays
- A Novel Discrete Current Behavior in the Current-Voltage Curve for Superconducting BaPb_Bi_O_3 Films
- Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH_4-NH_3-Ar Mixture
- Low Dielectric Constant Amorphous SiBN Ternary Films Prepared by Plasma-Enhanced Deposition
- Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis
- Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
- Threshold-Voltage Stability of P-Channel AIGaAs/GaAs MIS-like Heterostructure FETs
- Nb Surface Effects on the Properties of Nb Oxide Barrier Junctions Prepared Using a CF_4 Cleaning Process
- Photo-Ring-Opening Efficiency of 2,2-Diphenyl-2H-1-benzopyran Evaluated from Addition Reactivity of Amines to Its Ring-Opened Isomers
- Formation and Photo-initiated Addition-reaction of Chromenyl Polymer Films for Molecular Mounting
- High-Speed Recording Performance of Metal Azo Dye Containing Digital Video Disc-Recordable Discs
- Thermal and Optical Properties of Metal Azo Dyes for Digital Video Disc-Recordable Discs
- Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs
- Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution
- Anisotropy of the Upper Critical Magnetic Field in Single Crystal YBa_2Cu_3O_