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NSC Electron Corporation | 論文
- Effect of Ozone Annealing on the Charge Trapping Property of Ta_2O_5-Si_3N_4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition
- Influence of Crystal Originated Particles on Gate Oxide Breakdown
- Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers