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Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:crest Jst (japan Scien | 論文
- Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
- Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
- A High-Speed, Silicon-Based Few-Electron Memory Gain Cell
- Polycrystalline Silicon Single-Electron Transistor with Gate-Dependent Two-Period Current Oscillations