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Microelectronics Engineering Laboratory, Toshiba Corporation | 論文
- NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond
- EXPANSION CHARACTERISTICS OF MONTMORILLONITE AND SAPONITE UNDER VARIOUS RELATIVE HUMIDITY CONDITIONS
- Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon : A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Deactivation of Boron in Highly Boron-Doped Silicon
- Diffusion of Carbon in SiO_2 Films and Its Segregation at Si/SiO_2 Interface
- Mechanism of Defect Formation during Low Temperature Si Epitaxy on Clean Si Substrate