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MIRAI-ASRC-AIST | 論文
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Anomalous Difference between Replacements of D-H and H-D in Oxide Ceramics by Exposure to Air Contaning H_2O and D_2O Vapors