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Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd. | 論文
- Viewing Angle Enhancement of Three-Dimension/Two-Dimension Convertible Integral Imaging Display Using Double Collimated or Noncollimated Illumination
- Numerical Analysis of One-Dimensional Magnetophotonic Crystals with an Active Layer of a Highly Bi-Substituted Iron Garnet
- Degradation Phenomenon of p+to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process
- Process Design for Preventing the Gate Oxide Thinning in the Integration of Dual Gate Oxide Transistor
- New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- Scaling of Three-Dimensional Integral Imaging
- Degradation Phenomenon of p+ to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process