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LSI Research and Development Laboratory | 論文
- New Dynamic RAM Cell Combined with Hi-C Structure : A-2: LSI-1
- Soft Error Analysis of Fully Static MOS RAM : A-2: LSI-1
- Diffusion Length Measurement Using Dynamic MOS RAM : A-3: LSI-2
- Hot-Electron Trapping Effects of Short Channel 64 K Dynamic MOS RAM : A-2: LSI-1