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Korea Advanced Institute Of Science And Technology Dept Of Electrical Engineering And Computer Scien | 論文
- Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
- Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP (λ = 1.3μm) Buffer
- Integration of a HEMT and a MSM PD Using an InGaAsP(λ=1.3μm) Buffer
- InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage
- High Aspect-Ratio Through-Wafer Interconnections with Thick Oxidized Porous Silicon Sidewall Via
- A New GaAs Field Effect Transistor (FET) with DIpole Barrier (DIB)