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JASRI SPring8 | 論文
- 25pXK-1 二次元直交ダイマー系TbB_4とErB_4の結晶構造の温度変化(25pXK フラストレーション系,f電子系磁性,領域3(磁性,磁気共鳴))
- 19pTB-2 直交ダイマー系TbB_4の構造相転移と磁気構造(19pTB f電子系・化合物磁性,領域3(磁性,磁気共鳴))
- 直接窒化膜特性のシリコン結晶面密度依存性(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_Cr_xN Films
- Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_Ge)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
- Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
- Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy