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Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3000, Leuven, Belgium | 論文
- Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 μm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C
- AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance