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International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims | 論文
- Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces
- Formation of Boron Nitride (BN) Fullerene-Like Nanoparticles and (BN)_xC_y Nanotubes Using Carbon Nanotubes as Templates
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3(0.37 ≤ x ≤ 0.41)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3 (0.37≦x≦0.41)
- Plasma Etching of TEM Samples for Observing Grain Boundaries in Silicon Nitride
- Grain Boundary Structure and Solute Segregation in CuO Doped 3 mol% Yttria Stabilized Zirconia
- High-resolution analytical electron microscopy of boron nitrides laser heated at high pressure
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
- Magnetic Behavior of Fe Doped In_2O_3
- In situ electrical measurements and manipulation of B/Ndoped C nanotubes in a high-resolution transmission electron microscope
- New 300kV Energy-Filtering Field Emission Electron Microscope : Instrumentation, Measurement, and Fabrication Technology
- Temperature dependency of radiation damage in inorganic materials by 300 keV electrons
- High-resolution Observation of SrTiO_3 Interface by Convergent Beam Illumination
- New fullerenes in the B-C-N system: synthesis and analysis by an electron beam
- Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
- High-Resolution Holography Observation of H-Nb_2O_5
- Structural imperfection of β-Si_3N_4 crystals associated with nucleation
- Synthesis and microstructure of Cd_4SiS_6/Si composite nanowires
- B25 Well-crystallized Transition-metal Layered Double Hydroxides and Their Exfoliation
- 層状複水酸化物ナノシート