スポンサーリンク
Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ. | 論文
- Robust High-κ HfO_xN_y n-MOSFETs Using Low Work Function TbN Gate
- A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
- Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate