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Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, Republic of China | 論文
- Thermal-Stable Characteristics of Metamorphic Double $\delta$-Doped Heterostructure Field-Effect Transistor
- Off-State Breakdown Modeling for High-Schottky-Barrier $\delta$-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor