スポンサーリンク
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf | 論文
- Excess Arsenic in GaAs Grown at Low Temperatures by Molecular Beam Epitaxy
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing