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Institute of Industrial Science, university of Tokyo | 論文
- Perpendicular Magnetic Anisotropy of Metallic Multilayers Composed of Magnetic Layers Only: Ni/Co and Ni/Fe Multilayers
- First-Principles Calculation of the Magnetic Anisotropy Energies of Ag/Fe(001) and Au/Fe(001) Multilayers
- Display of Azido Glycoside on a Sensor Chip
- Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Direct Observation of Electron Jet from a Point Contact
- The Superconducting Properties of [001] Twist Boundaries in a Bi-Sr-Ca-Cu-O Superconductor
- Cryogenic Transmission Electron Microseopy of High T_c Ba-Yb-Cu Perovskile Oxide
- Ultrasonic relaxation study in methylcyclohexane and methyl acetate by plano-concave resonator method
- Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
- Terahertz Emission from Quantum Beats in Coupled Quantum Wells
- Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor
- Second Harmonic Generation of a Copper Vapor Laser Using an Anamorphic Optical System
- X-Ray Absorption Studies of High-T_c YBa_2Cu_3O_x : Condensed Matter
- Precise EXAFS Analysis for High-T_c YBa_2Cu_3O_x : Condensed Matter
- エネルギー貯蔵型 SrTiO_3-WO_3 光触媒の開発
- Cellular Uptake and Saccharide Chain Elongation of "Fluoro-amphiphilic" Glycosides
- Suppression of Stand-by Tunnel Current in Ultra-Thin Gate Oxide MOSFETs by Dual Oxide Thickness-Multiple Threshold Voltage CMOS(DOT-MTCMOS)
- Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors