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Institute Of Physics And Applied Physics Yonsei Univrsity | 論文
- Optimum Thickness of SiO_2 Layer Formed at the Interface of N-ZnO/P-Si Photodiodes
- First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
- Encapsulation of Organic Field-Effect Transistors with Highly Polarizable Transparent Amorphous Oxide
- Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation