スポンサーリンク
Institute Of Materials Science University Of Tsukuba:(present Address)electronics And Telecommunicat | 論文
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Pd-Ge-Au Based Hybrid Ohmic Contacts to High-Low Doped GaAs Field-Effect Transistor
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy