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Institute Of Basic Science Changwon National University | 論文
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- Effects of Donor Ion Doping on the Orientation and Ferroelectric Properties of Bismuth Titanate Thin Films
- Ferroelectric Properties of Nb-Doped Bi_4 Ti-3O_ Thin Films Prepared Using Surfactant in Acid or Basic Atmosphere
- Ferroelectric Properties of Tungsten-Substituted Bi_4Ti_3O_ Thin Film Prepared by Sol-Gel Method
- Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
- GaN-Based White-Light-Emitting Diodes Fabricated with a Mixture of Ba_3MgSi_2O_8 : Eu^ and Sr_2SiO_4 : Eu^ Phosphors
- Comparative Study of Hydrido Organo Siloxane Polymer and Hydrogen Silsesquioxane
- Effects of Donor Ion Doping on the Orientation and Ferroelectric Properties of Bismuth Titanate Thin Films