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Hyundai Electronics Industries Co. Ltd. | 論文
- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
- 3-D Highly Precise Self-Alignment Process Using Surface Tension of Liquid Resin Material
- New Electrically Conductive Adhesives Filled with Low-Melting-Point Alloy Fillers
- Numerical Analysis of the MC Scheme and Investigation of the Effects of Its Parameters
- Secondary Corrosion of Aluminum Alloy Due to Residual Sidewall and Its Removal Using M=0 Helicon Plasma Reactor
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge