スポンサーリンク
Hosei University Dang Laboratory | 論文
- Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence (Special Section on VLSI Design and CAD Algorithms)
- Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)