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Hiroshima University, Research Center for Nanodevices and Systems | 論文
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- Proposal of a Silicon Optical Modulator Based on Inversion-Carrier Absorption
- A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
- An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure
- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation