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High Energy Accelerator Res. Organization (KEK) | 論文

• Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
• Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
• In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon

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