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Graduate School of Engineering, Tohoku University | 論文
- Preparation of Fullerene by Pulsed Wire Discharge
- Temporal Change of Dissolved Inorganic Carbon in the Subsurface Water at Station KNOT (44°N, 155°E) in the Western North Pacific Subpolar Region
- Sensorless Torque Estimation in Switched Reluctance Drive Using Artificial Neural Networks and Inductance Vector Angle
- Nanomechanical Structure with Integrated Carbon Nanotube
- Pattern Transfer of Self-Ordered Structure with Diamond Mold
- Mechanical Energy Dissipation of Multiwalled Carbon Nanotube in Ultrahigh Vacuum
- The Effects of Interfacial Tensions of Amphiphilic Copolymers on Honeycomb-Patterned Films
- BIO-06 A HANDY INSTRUMENT FOR QUANTITATIVE EVALUATION OF KINEMATIC PATELLAR TENDON REFLEX RESPONSES(Bio-medical Equipments II,Technical Program of Oral Presentations)
- OJ-099 Effect of Daily Physical Activity on Autonomic Nerve Tone : Is Daily Activity harmful or Effective for Patients with Cardiac Disease(Autonomic nervous system-1, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Low-Power 8-Valued Cellular Array VLSI for High-Speed Image Processing (Special Issue on Super Chip for Intelligent Integrated Systems)
- Application of Extended AHP to the Analysis of User’s Acceptance of Environment-friendly Car
- Moho and Philippine Sea plate structure beneath central Honshu Island, Japan, from teleseismic receiver functions
- Strikingly Extended Morphology of Cells Grown on Carbon Nanotubes
- Build-on Technology of Bi-Directional Optical Communication System using Bi-Functional Organic Diodes
- An SOI-CMOS Active Magnetic Probe for High-Frequency Electromagnetic Emissions
- Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
- An Experimental Investigation of the Characteristics of the Secondary Atomization and Spray Combustion for Emulsified Fuel
- Numerical Investigation of Waste Plastic Injection in a Blast Furnace
- A Reducing Method of a Detailed Reaction Mechanism Based on the QSSA Method
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide