スポンサーリンク
Fukushima Toyo Communication Equipment Co. Ltd. | 論文
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Molecular Beam Epitaxially Grown ZnSe(001) Surface Studied by the In Situ Observation of RHEED Intensity
- Effect of Residual Strain on the Splitting of Excitonic Luminescence Lines in Epitaxially Grown ZnSe/GaAs
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
- Dielectric Properties of Rare-Earth-Oxide-Doped BaTiO_3 Ceramics Fired in Reducing Atmosphere ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Properties of Y5V Multilayer Ceramic Capacitors with Nickel Electrodes
- Low Temperature Growth of ZnSe/GaAs Using Post-Heated Molecular Beams
- Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE