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Fujitsu Ltd., Atsugi, Kanagawa 243-0197, Japan | 論文
- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
- 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)