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France Telecom, CNET Grenoble | 論文
- Static and Dynamic Characteristics of a 54 GHz f_ Implanted Base 0.35 μm Single-Polysilicon Bipolar Technology
- The Design and Fabrication of 0.35 μm Single-Polysilicon Self-Aligned Bipolar Transistors
- Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors