スポンサーリンク
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan | 論文
- High-Power Piezoelectric Characteristics of Nontextured Bismuth Layer-Structured Ferroelectric Ceramics
- Study of initial growth layer of GaSb on Si(111) by scanning tunneling microscopy (Special issue: Scanning probe microscopy)
- Production and Decay Properties of 264Hs and 265Hs
- Thickness Dependences of Resistivity and Temperature Coefficient of Resistance for Ge Thin Films Sandwiched between Si Layers for Uncooled Infrared Imaging Sensor
- New Result in the Production and Decay of an Isotope, 278113, of the 113th Element
- Study of GaSb Layers Grown on Ga/Si(111)-\sqrt{3}\times\sqrt{3} by Scanning Tunneling Microscopy
- Transport Phenomenon of Multilayer Zero-Gap Conductor in the Quantum Limit
- Calculation of Temperature Coefficient of Resistance for Potential Barrier Structure for Bolometer in Uncooled Infrared Image Sensor
- Electronic Structure of Hole-Doped Transition Metal Cyanides