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Faculty Of Engineering Tokyo Institute Of Technology | 論文
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- ハライドVPEによる紫外発光ZnO薄膜の作製
- ハライドVPEによる紫外発光ZnO薄膜の作製
- Si基板上ZnSエピタキシャル薄膜のZnOへの酸化過程
- Photoluminescence of Cd-Doped CuAlS_2
- Analysis on Secret Sharing Schemes with Non-Graphical Access Structures (Special Section on Cryptography and Information Security)
- 24aRS-5 固体ターゲット中の高速電子輸送に対する統合シミュレーション解析(核融合プラズマ(慣性閉じ込め),領域2,プラズマ基礎・プラズマ科学・核談合プラズマ・プラズマ宇宙物理)
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Study of π^+π^- Pair Production in a Two-Photon Process at TRISTAN : VENUS Collaboration
- New Limits on Neutral Scalar Bosons
- Measurement of the Reactions e^+e^-→e^+e^- and e^+e^-→γγ at √=52 GeV
- Search for the Top Quark in e^+e^- Annihilation at √=50 GeV:The First Result from the VENUS Detector at TRISTAN
- Time-of-Flight Counters for VENUS Detector
- The Design and Performance of Multiwire Proportional Chambers for High Flux Beam Monitoring
- 4-3 多元蒸着法により作製したSrGa_2S_4 : Ce薄膜の構造及び発光特性