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Electrotechnical Lab. Ibaraki Jpn | 論文
- Beam Scanning Binary Logic (OPTICAL COMPUTING 1)
- LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
- Diffusion Properties of Mg in Al_xGa_As
- Optical Ternary Memory and Logic Operation using a Twin-Stripe Laser Diode : FUTURE TECHNOLOGIES
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Deposition of Ge_C_x Alloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method
- Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
- Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films