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ECE Department, University of California, Santa Barbara, CA 93106, U.S.A. | 論文

• Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

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